j. e.is.s. .u , one. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB1490 description ? high dc current gain- : hfe= 5000(min)@lc= -6a ? low-collector saturation voltage- : vce(sat)= -2.5v(max.)@lc= -6a ? complement to type 2sd2250 applications ? designed for power amplifier applications ? optimum for sow hifi output applications. absolute maximum ratings(ta=25x:) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ tc-25c collector power dissipation @ ta=25c junction temperature storage temperature range value -160 -140 -5 -7 -12 90 3.5 150 -55-150 unit v v v a a w ?c r ? i ? .? . ii 1 2 ' 02 pin 1.base ( 2.collector 3.mitter 3 to-3pl package ^ ? - d qi ?'j |* -* ~b- o ^iaipfla.^ ? '? i >? g- dim a b c d b f g h j k n p q r u w ? ?*?*.c fc-h1* pm b ?' -^ 1 * f j a v i i ? k i ' ? j mm win 25.50 19.30 4^0 0.90 2.80 2.40 10.80 3.10 0.50 20.00 3.90 2.40 3.10 1.90 3.90 2.90 max 26.50 20.201 5^0 1.10 3jo 2.60 11.00 3.30 0.70 21.00 4.10 2.go 330 2.10 4.10 3.10 r -i nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp darlington power transistor 2SB1490 electrical characteristics tc~25'c unless otherwise specified symbol v(br)ceo vce(sat) vae(sat) icbo i ceo iebo hpe-1 hfe-2 fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc= -30ma; ib= 0 lc= -6a; ib= -6ma lc= -6a; ib= -6ma vcb=-160v; ie=0 vce= -140v; ib= 0 veb= -5v; lc= 0 lc=-1a;vce=-5v lc= -6a; vce= -5v lc=-0.5a;vce=-10v min -140 2000 5000 typ. 20 max -2.5 -3.0 -100 -100 -100 30000 unit v v v ua wa ua mhz switching times 'on tstg tf turn-on time storage time fall time ic=-6a; lbi=-lb2=-6ma, vcc= -50v 1.0 1.5 1.2 u s u s n s classifications q 5000-15000 p 8000-30000
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